Terbium nitride

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Terbium nitride
Names
IUPAC name
Azanylidyneterbium
Other names
Terbium mononitride
Identifiers
3D model (JSmol)
EC Number
  • 234-790-5
PubChem CID
  • InChI=1S/N.Tb
    Key: DOHQPUDBULHKAI-UHFFFAOYSA-N
  • [Tb]#N
Properties
GdN
Molar mass 171.26 g·mol−1
Appearanceblack powder
Density 9.49 g/cm3
Melting point 2,630 °C (4,770 °F; 2,900 K)
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

Terbium nitride is a binary inorganic compound of terbium and nitrogen with the chemical formula TbN. [1] [2] [3]

Contents

Physical properties

Terbium nitride crystalyzes with cubic crystal system of the space group of F3m3. [4]

Uses

Terbium nitride is used for high-end electronics, ceramics, luminescent materials, special metallurgy, petrochemical, artificial crystal, magnetic materials. [5]

Related Research Articles

<span class="mw-page-title-main">Terbium</span> Chemical element, symbol Tb and atomic number 65

Terbium is a chemical element; it has symbol Tb and atomic number 65. It is a silvery-white, rare earth metal that is malleable, and ductile. The ninth member of the lanthanide series, terbium is a fairly electropositive metal that reacts with water, evolving hydrogen gas. Terbium is never found in nature as a free element, but it is contained in many minerals, including cerite, gadolinite, monazite, xenotime and euxenite.

<span class="mw-page-title-main">Zinc nitride</span> Chemical compound

Zinc nitride (Zn3N2) is an inorganic compound of zinc and nitrogen, usually obtained as (blue)grey crystals. It is a semiconductor. In pure form, it has the anti-bixbyite structure.

<span class="mw-page-title-main">Hafnium carbide</span> Chemical compound

Hafnium carbide (HfC) is a chemical compound of hafnium and carbon. Previously the material was estimated to have a melting point of about 3,900 °C. More recent tests have been able to conclusively prove that the substance has an even higher melting point of 3,958 °C exceeding those of tantalum carbide and tantalum hafnium carbide which were both previously estimated to be higher. However, it has a low oxidation resistance, with the oxidation starting at temperatures as low as 430 °C. Experimental testing in 2018 confirmed the higher melting point yielding a result of 3,982 (±30°C) with a small possibility that the melting point may even exceed 4,000°C.

<span class="mw-page-title-main">Terbium(III) chloride</span> Chemical compound

Terbium(III) chloride (TbCl3) is a chemical compound. In the solid state TbCl3 has the YCl3 layer structure. Terbium(III) chloride frequently forms a hexahydrate.

Terbium(III) iodide (TbI3) is an inorganic chemical compound.

Praseodymium(III) nitride is a binary inorganic compound of praseodymium and nitrogen. Its chemical formula is PrN. The compound forms black crystals, and reacts with water.

<span class="mw-page-title-main">Terbium phosphide</span> Erbium compound

Terbium phosphide is an inorganic compound of terbium and phosphorus with the chemical formula TbP.

Praseodymium compounds are compounds formed by the lanthanide metal praseodymium (Pr). In these compounds, praseodymium generally exhibits the +3 oxidation state, such as PrCl3, Pr(NO3)3 and Pr(CH3COO)3. However, compounds with praseodymium in the +2 and +4 oxidation states, and unlike other lanthanides, the +5 oxidation state, are also known.

<span class="mw-page-title-main">Terbium compounds</span> Chemical compounds with at least one terbium atom

Terbium compounds are compounds formed by the lanthanide metal terbium (Tb). Terbium generally exhibits the +3 oxidation state in these compounds, such as in TbCl3, Tb(NO3)3 and Tb(CH3COO)3. Compounds with terbium in the +4 oxidation state are also known, such as TbO2 and BaTbF6. Terbium can also form compounds in the 0, +1 and +2 oxidation states.

Terbium perchlorate is an inorganic compound having chemical formula Tb(ClO4)3. This salt of terbium(III) can be obtained by reacting terbium(III,IV) oxide with perchloric acid. The perchlorates are non-coordinating anions, so this substance can be used as a starting material for forming Tb(III) complexes. For example, reaction with alanine forms a complex in which the carboxylate portion of four alanine units bridge between two terbium atoms. It can be used to synthesize terbium-containing metal-organic framework materials.

Holmium nitride is a binary inorganic compound of holmium and nitrogen with the chemical formula HoN.

Erbium nitride is a binary inorganic compound of erbium and nitrogen with the chemical formula ErN.

Ytterbium nitride is a binary inorganic compound of ytterbium and nitrogen with the chemical formula YbN.

<span class="mw-page-title-main">Dysprosium nitride</span> Chemical compound

Dypsrosium nitride is a binary inorganic compound of dysprosium and nitride with the chemical formula DyN.

<span class="mw-page-title-main">Plutonium nitride</span> Chemical compound

Plutonium nitride is a binary inorganic compound of plutonium and nitrogen with the chemical formula PuN.

Neptunium nitride is a binary inorganic compound of neptunium and nitrogen with the chemical formula NpN.

Gadolinium(III) nitride is a binary inorganic compound of gadolinium and nitrogen with the chemical formula GdN.

Lanthanum nitride is a binary inorganic compound of lanthanum and nitride with the chemical formula LaN.

Protactinium nitride is a binary inorganic compound of protactinium and nitrogen with the chemical formula PaN.

Lutetium nitride is a binary inorganic compound of lutetium and nitrogen with the chemical formula LuN.

References

  1. "Terbium Nitride". American Elements . Retrieved 9 February 2024.
  2. "TbN Powder / Terbium Nitride Powder 20um 99.9%". us-nano.com. Retrieved 9 February 2024.
  3. Perry, Dale L. (19 April 2016). Handbook of Inorganic Compounds. CRC Press. ISBN   978-1-4398-1462-8 . Retrieved 9 February 2024.
  4. "mp-2117: TbN (cubic, Fm-3m, 225)". Materials Project . Retrieved 9 February 2024.
  5. Yi, Gyu-Chul (13 January 2012). Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications. Springer Science & Business Media. p. 118. ISBN   978-3-642-22480-5 . Retrieved 10 February 2024.